Publication

Selected Publications

Year 2016-present

Year 2011-2015

Year 2006-2010

Year 2000-2005

2016-present:

Strategies for dislocation density reduction in CdTe epilayers grown directly on (211) Si substrates using MOVPE, J. Mater Sci: Mater Electron, vol. 35, 31 (1-6), 2024.01. (DOI: 10.1007/s10854-023-11842-4)
Dislocation reduction in an MOVPE-grown CdTe/Si epilayer by ex-situ annealing and its effect on the performances of gamma ray detectors fabricated, Physica Scripta, vol. 99, 015931(1-7), 2024.01. (DOI: https://doi.org/10.1088/1402-4896/ad14d4)
Dislocation Density Reduction in MOVPE-Grown (211)CdTe/Si by Post-Growth Pattering and Annealing, J. Elect. Materials, vol.52, pp. 3431-3435, 2023.03. (DOI: 10.1007/s11664-023-10318-9)
Growth and Characterization of Single-Crystal Lead Halide Perovskites for X-ray Detector Application, IEEE Trans. Nucl. Sci., vol. 70, no. 2, pp. 173-176, 2023.02 (DOI:10.1109/TNS.2022.3230401)
Low-Temperature Annealing of CdTe Detectors With Evaporated Gold Contacts and Its Effect on Detector Performance, IEEE Trans. Nucl. Sci., vol. 69, no. 8, pp. 1960-1964, 2022.08. (DOI: 10.1109/TNS.2022.3180009)
Analysis of dislocations and their correlation with dark currents in CdTe/Si heterojunction diode-type x-ray detectors, J. Appl.Phys., vol.130, 055302, (2021) (DOI: 10.1063/5.0058504
Properties of iodine-doped CdTe layers on (211) Si grown at high substrate temperatures by MOVPE, J. Elect. Materials, vol.49, No. 11, pp. 6996-6999, 2020.11 (DOI: 10.1007/s11664-020-08420-3)
Synchrotron characterization of high-Z, current-mode x-ray detectors, Review of Scientific Instruments, vol. 91, issue 2, 023509, 2020.02 ( https://doi.org/10.1063/1.5139403)
Metalorganic Vapor Phase Epitaxy of Thick and Uniform Single Crystal CdTe Epitaxial Layers on (211) Si Substrates for X-ray Imaging Detector Development, J. Elect. Materials, vol. 48, no. 12, pp. 7680-7685, 2019.12 (DOI: 10.1007/s11664-019-07601-z)
Characterization of Fine-Pixel X-ray Imaging Detector Array Fabricated by Using Thick Single-Crystal CdTe Layers on Si Substrates Grown by MOVPE, IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 518-523, 2019.01. DOI: 10.1109/TED.2018.2883325
Post Growth Annealing of MOVPE-Grown Single Crystal CdTe Epilayers on (211) Si Substrates, IEEE Trans. Nucl. Sci., vol. 65, No. 8, pp. 2325-2328, 2018.08. (DOI:10.1109/TNS.2018.2855751)
Development of Large-Area CdTe/n+-Si Epitaxial Layer Based Heterojunction Diode-Type Gamma-Ray Detector Arrays, IEEE Trans. Nucl. Sci., vol. 65, no. 4, pp. 1066-1069, 2018.04 ( DOI:10.1109/TNS.2018.2812154)
Characterization of (211) and (100) CdTe Layers Grown on Si Substrates by Metalorganic Vapor- Phase Epitaxy, J. Elect. Materials, vol. 46, no. 11, pp. 6704-6708, 2017.10 (DOI: 10.1007/s11664-017-5703-6) link
Dry Etching Characteristics of MOVPE Grown CdTe Epilayers in CH4, H2, Ar ECR Plasmas, J. Elect. Materials, vol. 46, no. 9, pp. 5400-5404, 2017.9. (DOI: 10.1007/s11664-017-5528-3) link

Improving the Performances of CdTe Gamma Ray Detectors by H2/Ar ECR Plasma Processing, IEEE Electron Device Letter, vol. 37, No.8, pp. 1059-1062, 2016.8. (DOI: 10.1109/LED.2016.2580675)

2011-2015:

Surface Processing of CdTe Detectors Using Hydrogen Bromide-Based Etching Solution, IEEE Electron Device Letter, vol. 36, issue 8, pp. 856-858, (2015) (DOI: 10.1109/LED.2015.2450835)
Development of Large-Area Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrates, IEEE Trans. Nucl. Sci., vol. 61, no. 5, pp. 2555-2558, (2014) (DOI: 10.1109/TNS.2014.2347374)
Development of Nuclear Radiation Detectors by Use of Thick Single-Crystal CdTe Layers Grown on (211) p+-Si Substrates by MOVPE, J. Elect. Materials, vol. 43, no. 8, pp. 2860-2863, (2014) (DOI: 10.1007/s11664-014-3132-3)
Vapor-phase epitaxial growth of thick single crystal CdTe on Si substrate for x-ray, gamma ray spectroscopic detector development, phys. stat. sol ( c), vol. 11, no. 7-8, pp. 1333-1336, (2014) (DOI:10.1002/pssc.201300559)
Charge transport properties of p-CdTe/n-CdTe/n+-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers, J. Appl. Phys., vol. 114, issue 16, 164510, (2013). (DOI: 10.1063/1.4828479)
Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy, J. Elect. Materials, vol. 42, no. 11, pp. 3125-3128, (2013). (DOI: 10.1007/s11664-013-2680-2)
MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrates for Nuclear Radiation Detector Development, IEEE Trans. Nucl. Sci., vol. 60, no. 4, pp. 2859-2863, (2013). (DOI: 10.1109/TNS.2013.2263841) pdf
Fabrication and Characterization of X-Ray Spectroscopic Imaging Arrays Based on Thick Single-Crystal CdTe Epitaxial Layers, IEEE Trans. Electron Devices, vol. 59, issue 12, pp. 3450-3455, (2012)�@(DOI: 10.1109/TED.2012.2222413).
Development of Spectroscopic Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrates, IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 3201-3204, (2012).
Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate, J. Elect. Materials, vol. 41, no. 10, pp. 2754-2758, (2012).
Fabrication of radiation imaging detector arrays using MOVPE grown thick single crystal CdTe layers on Si substrate, phys. stat. solidi (c), vol. 9, No. 8-9, pp. 1848-1851, (2012).
MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrate for Nuclear Radiation Detector Development, IEEE 2012- 19th RTSD Conference Record, R07-1, pp. 4212-4215 (Invited) (2012).
Post-Growth Annealing of CdTe Layers Grown on Si Substrtaes by MOVPE, The 2012 US Workshop on the Physics and Chemistry of II-VI Materials, Extended abstract, pp. 131-134 (2012).
Development of Spectroscopic Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrates, IEEE 2011- RTSD Conference Record R05-1, pp. 4510-4513 (invited) (2011).
Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy, Proc. SPIE , vol. 7995, 79952T1-6 (2011).
Dark Current Characteristics of Radiation Detector Array Developed Using MOVPE Grown Thick CdTe Layers on Si Substrate, The 2011 US Workshop on the Physics and Chemistry of II-VI Materials, Extended abstract pp. 163-166 (2011).

2006-2010:

Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy, J. Elect. Materials, vol. 39, pp. 1118-1123, (2010)
MOVPE Growth of Thick CdTe Layers on Si Substrate and Their Application to Radiation Detectors, Radiation, vol. 36, No. 2, pp. 41-48, (2010), (Division of Radiation Science, The Japan Society of Applied Physics, in Japanese)
MOVPE Growth of CdTe on Si Substrates for Gamma Ray Detector Fabrication, IEEE Trans. Nucl. Sci.,IEEE Trans. Nucl. Sci, vol. 56, no. 3, pp.836-840, (2009)
Electrical Properties of Iodine-Doped CdTe Epitaxial Films on Si Substrates Grown by MOVPE, IEEE Trans. Nucl. Sci.,IEEE Trans. Nucl. Sci, vol. 56, no. 4, pp.1731-1735, (2009)
Fabrication and Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors, J.Elect.Materials, Vol.37, pp.1391-1395 (2008)
Electrical Properties of Halogen-Doped CdTe Epitaxial Films on Si Substrates Grown by MOVPE, IEEE 2008-RTSD Conference Record R07-2(invited) (2008)
Excimer Laser Etching Process of CdTe Crystals for Formation of Deep Vertical Trenches, J. Elect. Materials, Vol.36, pp.837-840 (2007)
Characterization of CdTe/n⁺-Si Heterojunction Diodes for Nuclear Radiation Detectors, IEEE Trans. Nucl. Sci., Vol54, No4, pp.817-820 (2007)
Fabrication abd Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors, The 2007 US Workshop on the Physics and Chemistry of II-VI Materials, Extended Abstracts, pp.39-42 (2007)
Development of Heterojunction Diode-Type Gamma Ray Detectors Based on Epitaxially Grown Thick CdTe on n⁺-Si Substrates, IEEE Electron Device Letters, Vol.27(11), pp.-890-892 (2006)
Characterization of CdTe/n⁺-Si Heterojyunction Diodes for Nuclear Radiation Imaging Detectors, IEEE 2006 15th Intern. Workshop on R-T. Semicon. X-and Gamma Ray Detectors(RTSD) Conference Record(Invited), pp.R14-8 (2006)
Direct Growth og High-Quality Thick CdTe Epilayers on Si(211) Substrates by Metalorganic Vapor Phase Epitaxy for Nuclear Radiation Detection and Imaging, J. Elect. Materials, Vol.35(6), pp.1257-1261 (2006)

2000-2005:

Control of Zn Composition (01-xZn_xTe Epitaxial Layers on GaAs Substrates Grown by MOVPE, Applied Surface Science, Vol.244, pp.347-350 (2005)
Development of Nuclear Radiation Detectors with Energy Resolution Capability Based on CdTe-n+-GaAs Heterojunction Diodes, IEEE Electron Device Letter, vol.26, pp.8-10 (2005)
Direct growth of high-quality CdTe epilayers on Si (211) substrates by metalorganic Vapor-phase epitaxy, Journal of Crystal Growth, Vol.284, pp.15-19 (2005)
Development of Nuclear Radiation Detectors With Energy Discrimination Capabilities Based on Thick CdTe Layers Grown by Metalorganic Vapor Phase Epitaxy, IEEE Transactions on Nuclear Science, Vol.52, No.5, pp.1951-1955 (2005)
Development of Nuclear Radiation Detectors Based on Epitaxially Grown Thick CdTe Layers on n⁺-GaAs Substrates, J. Elect. Materials, Vol.34, pp.815-819 (2005)
Direct Growth of High-quality Thick CdTe Epilayers on Si(211) Substrates by Metalorganic Vapor Phase Epitaxy for Nuclear Radiation Detection and Imaging, Ext.Abstract 2005 US Workshop on the Phys. Chem. II-VI Materials, pp.73-76 (2005)
Optical Emission Characteristics of Ablation Plasma Plumes During The Laser-Etching Process of CdTe, J. Elect. Materials, Vol34, pp.1428-1431 (2005)
Growth of Thick CdTe Epilayers on GaAs Substrates and Evaluation of CdTe/n⁺-GaAs Heterojunction Diodes for an X-ray Imaging Detector, J. Elect. Materials, Vol33, pp. 645-650 (2004)
Surface Processing of CdTe Crystals by an Excimer Laser and its Application in Fabricating Nuclear Radiation Detectors, Phys. Sta. Sol.(c) vol.1, No.4, pp.1071-1074 (2004)
MOVPE Growth of thick CdTe Heteroepitaxial Layers for X-ray Imaging Detectors, Phys. Sta. Sol.(c) vol.1, No.4, pp.1075-1078 (2004).
Development of CdTe Nuclear Radiation Detectors for Spectroscopy and Imaging Applications, IEEE 2003 -RTSD Conference Record R2-2.
Energy Discriminated Imaging for Gamma-ray by 128 Pixels CdTe High-Energy Radiation Imaging Device, IEEE 2003 -RTSD Conference Record R17-4.
MOVPE growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substrates, J. Elect. Materials, vol. 32, pp. 728-732 (2003).
Influence of laser irradiation and laser-induced In doping on photoluminescence of CdTe crystals, Semicond. Sci. Technol. vol. 18, pp. 560-565, 2003.
Diode type CdTe strip and linear array detectors for gamma-ray detection and imaging, IEEE Trans. Nucl. Sci., vol. 49, pp. 2250-2255, 2002.
Growth Conditions of Iodine doped n+-CdTe Layers in MOVPE, J. Elect. Materials,vol. 31, pp.785-790, 2002.
Excimer laser processing for the integrated gamma-ray detectors, SPIE Proc. vol. 4784, pp. 305-314, 2002.
p-i-n CdTe 128-pixel detector for gamma-ray imaging fabricated by excimer laser processing, SPIE Proc. vol. 4784, pp. 259-268, 2002.
Growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substrates by metalorganic vapor phase epitaxy, Jpn. J. Appl. Phys., vol. 41, pp. L1109-L1111, 2002.
Stability issues of high-energy resolution diode type CdTe nuclear radiation detectors in a long-term operation, Nucl. Instr. Methods. Phys. Research A, vol. 491, pp.168-175, 2002.
Low-temperature growth, doping of CdTe epilayers on CdTe substrates in a remote-plasma-assisted MOCVD system for the nuclear radiation detector applications, physica status solidi b, vol. 229, pp. 83-87, 2002.
A new fabrication technique of CdTe strip detectors for gamma-ray imaging and spectroscopy, physica status solidi b, vol. 229, pp. 1103-1107, 2002.
Growth and Characterization of Cubic-CdS Layer on (100) GaAs in Metalorganic Vapor-Phase Epitaxy, J. Crys. Growth, vol.222, pp.477-481, 2001.
Multi-pixel p-i-n CdTe array fabricated by laser processing, Radiation, vol. 27, pp. 23-28, 2001. (Division of Radiation Science, The Japan Society of Applied Physics, in Japanese)
Shallow junction formation on p-like CdTe crystals by indium diffusion using excimer laser annealing, J. Elect. Materials, vol. 30, pp. 911-916, 2001.
Excimer laser doping techniques for II-VI semiconductors, Applied Surface Science, vol. 175/176, pp. 462-467, 2001.
High-resolution CdTe nuclear radiation detectors in a new M-p-n design, Nucl. Instr. Methods. Phys. Research A, vol. 458, pp. 478-483, 2001.
Fabrication of CdTe strip detectors for imaging applications, Nucl. Instr. Methods. Phys. Research A, vol. 458, pp. 339-343, 2001.
Growth Characteristics of CdZnTe Layers in Metalorganic Vapor-Phase Epitaxy, J. Crys. Growth, vol. 214/215, pp. 19-24, 2000.
Low-temperature processing heavily doping by epitaxial growth and laser annealing for the fabrication of CdTe gamma-ray detectors, SPIE Proc. Vol. 4141, pp. 226-234, 2000.
Performance of CdTe Gamma-Ray Detectors Fabricated in a New M-pi-n Design, J. Crys. Growth. vol. 214/215, pp. 1116-1120, 2000.
Pattern doping on CdTe by excimer laser irradiation, J. Crys. Growth, vol. 214/215, pp. 520-523, 2000.
Low temperature growth and n-type doping of CdTe by remote-plasma-assisted metalorganic chemical vapor deposition method, VACUUM, vol. 59, pp. 678-685, 2000.

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Selected Publications

Strategies for dislocation density reduction in CdTe epilayers grown directly on (211) Si substrates using MOVPE, J. Mater Sci: Mater Electron, vol. 35, 31 (1-6), 2024.01. (DOI: 10.1007/s10854-023-11842-4)

Dislocation reduction in an MOVPE-grown CdTe/Si epilayer by ex-situ annealing and its effect on the performances of gamma ray detectors fabricated, Physica Scripta, vol. 99, 015931(1-7), 2024.01. (DOI: https://doi.org/10.1088/1402-4896/ad14d4)

Dislocation Density Reduction in MOVPE-Grown (211)CdTe/Si by Post-Growth Pattering and Annealing, J. Elect. Materials, vol.52, pp. 3431-3435, 2023.03. (DOI: 10.1007/s11664-023-10318-9)

Growth and Characterization of Single-Crystal Lead Halide Perovskites for X-ray Detector Application, IEEE Trans. Nucl. Sci., vol. 70, no. 2, pp. 173-176, 2023.02 (DOI:10.1109/TNS.2022.3230401)

Low-Temperature Annealing of CdTe Detectors With Evaporated Gold Contacts and Its Effect on Detector Performance, IEEE Trans. Nucl. Sci., vol. 69, no. 8, pp. 1960-1964, 2022.08. (DOI: 10.1109/TNS.2022.3180009)

Analysis of dislocations and their correlation with dark currents in CdTe/Si heterojunction diode-type x-ray detectors, J. Appl.Phys., vol.130, 055302, (2021) (DOI: 10.1063/5.0058504

Properties of iodine-doped CdTe layers on (211) Si grown at high substrate temperatures by MOVPE, J. Elect. Materials, vol.49, No. 11, pp. 6996-6999, 2020.11 (DOI: 10.1007/s11664-020-08420-3)

Synchrotron characterization of high-Z, current-mode x-ray detectors, Review of Scientific Instruments, vol. 91, issue 2, 023509, 2020.02 ( https://doi.org/10.1063/1.5139403)

Metalorganic Vapor Phase Epitaxy of Thick and Uniform Single Crystal CdTe Epitaxial Layers on (211) Si Substrates for X-ray Imaging Detector Development, J. Elect. Materials, vol. 48, no. 12, pp. 7680-7685, 2019.12 (DOI: 10.1007/s11664-019-07601-z)

Characterization of Fine-Pixel X-ray Imaging Detector Array Fabricated by Using Thick Single-Crystal CdTe Layers on Si Substrates Grown by MOVPE, IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 518-523, 2019.01. DOI: 10.1109/TED.2018.2883325

Post Growth Annealing of MOVPE-Grown Single Crystal CdTe Epilayers on (211) Si Substrates, IEEE Trans. Nucl. Sci., vol. 65, No. 8, pp. 2325-2328, 2018.08. (DOI:10.1109/TNS.2018.2855751)

Development of Large-Area CdTe/n+-Si Epitaxial Layer Based Heterojunction Diode-Type Gamma-Ray Detector Arrays, IEEE Trans. Nucl. Sci., vol. 65, no. 4, pp. 1066-1069, 2018.04 ( DOI:10.1109/TNS.2018.2812154)

Characterization of (211) and (100) CdTe Layers Grown on Si Substrates by Metalorganic Vapor- Phase Epitaxy, J. Elect. Materials, vol. 46, no. 11, pp. 6704-6708, 2017.10 (DOI: 10.1007/s11664-017-5703-6) link

Dry Etching Characteristics of MOVPE Grown CdTe Epilayers in CH4, H2, Ar ECR Plasmas, J. Elect. Materials, vol. 46, no. 9, pp. 5400-5404, 2017.9. (DOI: 10.1007/s11664-017-5528-3) link

Improving the Performances of CdTe Gamma Ray Detectors by H2/Ar ECR Plasma Processing, IEEE Electron Device Letter, vol. 37, No.8, pp. 1059-1062, 2016.8. (DOI: 10.1109/LED.2016.2580675)

Surface Processing of CdTe Detectors Using Hydrogen Bromide-Based Etching Solution, IEEE Electron Device Letter, vol. 36, issue 8, pp. 856-858, (2015) (DOI: 10.1109/LED.2015.2450835)

Development of Large-Area Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrates, IEEE Trans. Nucl. Sci., vol. 61, no. 5, pp. 2555-2558, (2014) (DOI: 10.1109/TNS.2014.2347374)

Development of Nuclear Radiation Detectors by Use of Thick Single-Crystal CdTe Layers Grown on (211) p+-Si Substrates by MOVPE, J. Elect. Materials, vol. 43, no. 8, pp. 2860-2863, (2014) (DOI: 10.1007/s11664-014-3132-3)

Vapor-phase epitaxial growth of thick single crystal CdTe on Si substrate for x-ray, gamma ray spectroscopic detector development, phys. stat. sol ( c), vol. 11, no. 7-8, pp. 1333-1336, (2014) (DOI:10.1002/pssc.201300559)

Charge transport properties of p-CdTe/n-CdTe/n+-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers, J. Appl. Phys., vol. 114, issue 16, 164510, (2013). (DOI: 10.1063/1.4828479)

Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy, J. Elect. Materials, vol. 42, no. 11, pp. 3125-3128, (2013). (DOI: 10.1007/s11664-013-2680-2)

MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrates for Nuclear Radiation Detector Development, IEEE Trans. Nucl. Sci., vol. 60, no. 4, pp. 2859-2863, (2013). (DOI: 10.1109/TNS.2013.2263841) pdf

Fabrication and Characterization of X-Ray Spectroscopic Imaging Arrays Based on Thick Single-Crystal CdTe Epitaxial Layers, IEEE Trans. Electron Devices, vol. 59, issue 12, pp. 3450-3455, (2012)�@(DOI: 10.1109/TED.2012.2222413).

Development of Spectroscopic Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrates, IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 3201-3204, (2012).

Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate, J. Elect. Materials, vol. 41, no. 10, pp. 2754-2758, (2012).

Fabrication of radiation imaging detector arrays using MOVPE grown thick single crystal CdTe layers on Si substrate, phys. stat. solidi (c), vol. 9, No. 8-9, pp. 1848-1851, (2012).

MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrate for Nuclear Radiation Detector Development, IEEE 2012- 19th RTSD Conference Record, R07-1, pp. 4212-4215 (Invited) (2012).

Post-Growth Annealing of CdTe Layers Grown on Si Substrtaes by MOVPE, The 2012 US Workshop on the Physics and Chemistry of II-VI Materials, Extended abstract, pp. 131-134 (2012).

Development of Spectroscopic Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrates, IEEE 2011- RTSD Conference Record R05-1, pp. 4510-4513 (invited) (2011).

Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy, Proc. SPIE , vol. 7995, 79952T1-6 (2011).

Dark Current Characteristics of Radiation Detector Array Developed Using MOVPE Grown Thick CdTe Layers on Si Substrate, The 2011 US Workshop on the Physics and Chemistry of II-VI Materials, Extended abstract pp. 163-166 (2011).

Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy, J. Elect. Materials, vol. 39, pp. 1118-1123, (2010)

MOVPE Growth of Thick CdTe Layers on Si Substrate and Their Application to Radiation Detectors, Radiation, vol. 36, No. 2, pp. 41-48, (2010), (Division of Radiation Science, The Japan Society of Applied Physics, in Japanese)

MOVPE Growth of CdTe on Si Substrates for Gamma Ray Detector Fabrication, IEEE Trans. Nucl. Sci.,IEEE Trans. Nucl. Sci, vol. 56, no. 3, pp.836-840, (2009)

Electrical Properties of Iodine-Doped CdTe Epitaxial Films on Si Substrates Grown by MOVPE, IEEE Trans. Nucl. Sci.,IEEE Trans. Nucl. Sci, vol. 56, no. 4, pp.1731-1735, (2009)

Fabrication and Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors, J.Elect.Materials, Vol.37, pp.1391-1395 (2008)

Electrical Properties of Halogen-Doped CdTe Epitaxial Films on Si Substrates Grown by MOVPE, IEEE 2008-RTSD Conference Record R07-2(invited) (2008)

Excimer Laser Etching Process of CdTe Crystals for Formation of Deep Vertical Trenches, J. Elect. Materials, Vol.36, pp.837-840 (2007)

Characterization of CdTe/n+-Si Heterojunction Diodes for Nuclear Radiation Detectors, IEEE Trans. Nucl. Sci., Vol54, No4, pp.817-820 (2007)

Fabrication abd Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors, The 2007 US Workshop on the Physics and Chemistry of II-VI Materials, Extended Abstracts, pp.39-42 (2007)

Development of Heterojunction Diode-Type Gamma Ray Detectors Based on Epitaxially Grown Thick CdTe on n+-Si Substrates, IEEE Electron Device Letters, Vol.27(11), pp.-890-892 (2006)

Characterization of CdTe/n+-Si Heterojyunction Diodes for Nuclear Radiation Imaging Detectors, IEEE 2006 15th Intern. Workshop on R-T. Semicon. X-and Gamma Ray Detectors(RTSD) Conference Record(Invited), pp.R14-8 (2006)

Direct Growth og High-Quality Thick CdTe Epilayers on Si(211) Substrates by Metalorganic Vapor Phase Epitaxy for Nuclear Radiation Detection and Imaging, J. Elect. Materials, Vol.35(6), pp.1257-1261 (2006)

Control of Zn Composition (01-xZnxTe Epitaxial Layers on GaAs Substrates Grown by MOVPE, Applied Surface Science, Vol.244, pp.347-350 (2005)

Development of Nuclear Radiation Detectors with Energy Resolution Capability Based on CdTe-n+-GaAs Heterojunction Diodes, IEEE Electron Device Letter, vol.26, pp.8-10 (2005)

Direct growth of high-quality CdTe epilayers on Si (211) substrates by metalorganic Vapor-phase epitaxy, Journal of Crystal Growth, Vol.284, pp.15-19 (2005)

Development of Nuclear Radiation Detectors With Energy Discrimination Capabilities Based on Thick CdTe Layers Grown by Metalorganic Vapor Phase Epitaxy, IEEE Transactions on Nuclear Science, Vol.52, No.5, pp.1951-1955 (2005)

Development of Nuclear Radiation Detectors Based on Epitaxially Grown Thick CdTe Layers on n+-GaAs Substrates, J. Elect. Materials, Vol.34, pp.815-819 (2005)

Direct Growth of High-quality Thick CdTe Epilayers on Si(211) Substrates by Metalorganic Vapor Phase Epitaxy for Nuclear Radiation Detection and Imaging, Ext.Abstract 2005 US Workshop on the Phys. Chem. II-VI Materials, pp.73-76 (2005)

Optical Emission Characteristics of Ablation Plasma Plumes During The Laser-Etching Process of CdTe, J. Elect. Materials, Vol34, pp.1428-1431 (2005)

Growth of Thick CdTe Epilayers on GaAs Substrates and Evaluation of CdTe/n+-GaAs Heterojunction Diodes for an X-ray Imaging Detector, J. Elect. Materials, Vol33, pp. 645-650 (2004)

Surface Processing of CdTe Crystals by an Excimer Laser and its Application in Fabricating Nuclear Radiation Detectors, Phys. Sta. Sol.(c) vol.1, No.4, pp.1071-1074 (2004)

MOVPE Growth of thick CdTe Heteroepitaxial Layers for X-ray Imaging Detectors, Phys. Sta. Sol.(c) vol.1, No.4, pp.1075-1078 (2004).

Development of CdTe Nuclear Radiation Detectors for Spectroscopy and Imaging Applications, IEEE 2003 -RTSD Conference Record R2-2.

Energy Discriminated Imaging for Gamma-ray by 128 Pixels CdTe High-Energy Radiation Imaging Device, IEEE 2003 -RTSD Conference Record R17-4.

MOVPE growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substrates, J. Elect. Materials, vol. 32, pp. 728-732 (2003).

Influence of laser irradiation and laser-induced In doping on photoluminescence of CdTe crystals, Semicond. Sci. Technol. vol. 18, pp. 560-565, 2003.

Diode type CdTe strip and linear array detectors for gamma-ray detection and imaging, IEEE Trans. Nucl. Sci., vol. 49, pp. 2250-2255, 2002.

Growth Conditions of Iodine doped n+-CdTe Layers in MOVPE, J. Elect. Materials,vol. 31, pp.785-790, 2002.

Excimer laser processing for the integrated gamma-ray detectors, SPIE Proc. vol. 4784, pp. 305-314, 2002.

p-i-n CdTe 128-pixel detector for gamma-ray imaging fabricated by excimer laser processing, SPIE Proc. vol. 4784, pp. 259-268, 2002.

Growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substrates by metalorganic vapor phase epitaxy, Jpn. J. Appl. Phys., vol. 41, pp. L1109-L1111, 2002.

Stability issues of high-energy resolution diode type CdTe nuclear radiation detectors in a long-term operation, Nucl. Instr. Methods. Phys. Research A, vol. 491, pp.168-175, 2002.

Low-temperature growth, doping of CdTe epilayers on CdTe substrates in a remote-plasma-assisted MOCVD system for the nuclear radiation detector applications, physica status solidi b, vol. 229, pp. 83-87, 2002.

A new fabrication technique of CdTe strip detectors for gamma-ray imaging and spectroscopy, physica status solidi b, vol. 229, pp. 1103-1107, 2002.

Growth and Characterization of Cubic-CdS Layer on (100) GaAs in Metalorganic Vapor-Phase Epitaxy, J. Crys. Growth, vol.222, pp.477-481, 2001.

Multi-pixel p-i-n CdTe array fabricated by laser processing, Radiation, vol. 27, pp. 23-28, 2001. (Division of Radiation Science, The Japan Society of Applied Physics, in Japanese)

Shallow junction formation on p-like CdTe crystals by indium diffusion using excimer laser annealing, J. Elect. Materials, vol. 30, pp. 911-916, 2001.

Excimer laser doping techniques for II-VI semiconductors, Applied Surface Science, vol. 175/176, pp. 462-467, 2001.

High-resolution CdTe nuclear radiation detectors in a new M-p-n design, Nucl. Instr. Methods. Phys. Research A, vol. 458, pp. 478-483, 2001.

Fabrication of CdTe strip detectors for imaging applications, Nucl. Instr. Methods. Phys. Research A, vol. 458, pp. 339-343, 2001.

Growth Characteristics of CdZnTe Layers in Metalorganic Vapor-Phase Epitaxy, J. Crys. Growth, vol. 214/215, pp. 19-24, 2000.

Low-temperature processing heavily doping by epitaxial growth and laser annealing for the fabrication of CdTe gamma-ray detectors, SPIE Proc. Vol. 4141, pp. 226-234, 2000.

Performance of CdTe Gamma-Ray Detectors Fabricated in a New M-pi-n Design, J. Crys. Growth. vol. 214/215, pp. 1116-1120, 2000.

Pattern doping on CdTe by excimer laser irradiation, J. Crys. Growth, vol. 214/215, pp. 520-523, 2000.

Low temperature growth and n-type doping of CdTe by remote-plasma-assisted metalorganic chemical vapor deposition method, VACUUM, vol. 59, pp. 678-685, 2000.

Characterization of CdTe/n⁺-Si Heterojunction Diodes for Nuclear Radiation Detectors, IEEE Trans. Nucl. Sci., Vol54, No4, pp.817-820 (2007)

Development of Heterojunction Diode-Type Gamma Ray Detectors Based on Epitaxially Grown Thick CdTe on n⁺-Si Substrates, IEEE Electron Device Letters, Vol.27(11), pp.-890-892 (2006)

Characterization of CdTe/n⁺-Si Heterojyunction Diodes for Nuclear Radiation Imaging Detectors, IEEE 2006 15th Intern. Workshop on R-T. Semicon. X-and Gamma Ray Detectors(RTSD) Conference Record(Invited), pp.R14-8 (2006)

Control of Zn Composition (01-xZn_xTe Epitaxial Layers on GaAs Substrates Grown by MOVPE, Applied Surface Science, Vol.244, pp.347-350 (2005)

Development of Nuclear Radiation Detectors Based on Epitaxially Grown Thick CdTe Layers on n⁺-GaAs Substrates, J. Elect. Materials, Vol.34, pp.815-819 (2005)

Growth of Thick CdTe Epilayers on GaAs Substrates and Evaluation of CdTe/n⁺-GaAs Heterojunction Diodes for an X-ray Imaging Detector, J. Elect. Materials, Vol33, pp. 645-650 (2004)